| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1156 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 61 K |
| KTB1151 | PNP transistor for low collector saturation voltage large current applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 383 K |
| QRB1113 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 146 K |
| QRB1114 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 146 K |
| QRB1133 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 148 K |
| QRB1134 | Reflective Object Sensor. Phototransistor | distributor | - | - | - | - | 148 K |
| QVB11123 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | distributor | - | - | - | - | 185 K |
| QVB11124 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | distributor | - | - | - | - | 185 K |
| QVB11223 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | distributor | - | - | - | - | 185 K |
| QVB11224 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | distributor | - | - | - | - | 185 K |
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