Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SB1237 | PNP silicon medium power transistor | ROHM | ATV | 3 | - | - | 123 K |
2SB1243 | PNP silicon power transistor | ROHM | ATV | 3 | - | - | 75 K |
2SB1255 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 74 K |
2SB1282 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 430 K |
2SB1283 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 412 K |
2SB1284 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 429 K |
2SB1285 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 415 K |
2SB1299 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 53 K |
KTB1241 | PNP transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 270 K |
KTB1260 | PNP transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 119 K |
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