| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB12-140 | Insulated gate bipolar transistor (IGBT) | distributor | - | 3 | - | - | 118 K |
| 7MBR35SB120 | IGBT module(S series) | distributor | - | 24 | - | - | 559 K |
| 7MBR35SB120-01 | IGBT module | distributor | - | 24 | - | - | 440 K |
| 7MBR50SB120 | IGGBT module(S series) | distributor | - | 24 | - | - | 576 K |
| 7MBR50SB120-01 | IGGBT module | distributor | - | 24 | - | - | 431 K |
| MHPM7B12A120A | Hybrid power module | Motorola | - | 25 | -40°C | 125°C | 245 K |
| MSB1218A-RT1 | NPN silicon general purpose amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 156 K |
| MSB1218A-ST1 | NPN silicon general purpose amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 156 K |
| SMDB12C | Transient Voltage Suppressor | Microsemi-Corporation | SOIC8 | - | - | - | 103 K |
| VHB128-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
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