| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DT28F160F3B120 | Fast boot block flash memory 16 Mbit. Access speed 120 ns | Intel-Corporation | SSOP | 56 | -40°C | 85°C | 277 K |
| DT28F800F3B120 | Fast boot block flash memory 8 Mbit. Access speed 120 ns | Intel-Corporation | SSOP | 56 | -40°C | 85°C | 277 K |
| EIB1213-2P | 12.75-13.25GHz, 2W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| EIB1213-4P | 12.75-13.25GHz, 4W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| GT28F008B3-B120 | Smart 3 advanced boot block byte-wide flash memory 8 Mbit. Access speed 120 ns | Intel-Corporation | microBGA | 48 | -40°C | 85°C | 408 K |
| GT28F016B3-B120 | Smart 3 advanced boot block byte-wide flash memory 16 Mbit. Access speed 120 ns | Intel-Corporation | microBGA | 48 | -40°C | 85°C | 408 K |
| GT28F160F3B120 | Fast boot block flash memory 16 Mbit. Access speed 120 ns | Intel-Corporation | microBGA | 56 | -40°C | 85°C | 277 K |
| GT28F800F3B120 | Fast boot block flash memory 8 Mbit. Access speed 120 ns | Intel-Corporation | microBGA | 56 | -40°C | 85°C | 277 K |
| PM25RSB120 | 25 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 82 K |
| TE28F008B3-B120 | Smart 3 advanced boot block byte-wide flash memory 8 Mbit. Access speed 120 ns | Intel-Corporation | TSOP | 40 | -40°C | 85°C | 408 K |
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