| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B120/B | 20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection | distributor | SMA | 2 | -60°C | 150°C | 57 K |
| HLB120A | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 31 K |
| HLB121I | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 31 K |
| HLB121J | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 31 K |
| HLB122I | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 34 K |
| HLB122J | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 34 K |
| HLB122T | Emitter to base voltage:6V; NPN triple diffused planar type high voltage transistor for use in switching applications | distributor | - | 3 | - | - | 34 K |
| HLB123D | Emitter to base voltage:8V; NPN epitaxial planar transistor | distributor | - | 3 | - | - | 38 K |
| HLB123I | Emitter to base voltage:8V; NPN epitaxial planar transistor | distributor | - | 3 | - | - | 36 K |
| SB120 | 20V; 1.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | distributor | - | 2 | -55°C | 125°C | 74 K |
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