| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| Am29SL800CB120FIB | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | -40°C | 85°C | 549 K |
| Am29SL800CB120WBC | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 120ns | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 549 K |
| Am29SL800CB120WBCB | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 120ns | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 549 K |
| Am29SL800CB120WBI | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 120ns | AMD-Advanced-Micro-Devices | FBGA | 48 | -40°C | 85°C | 549 K |
| Am29SL800CB120WBIB | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 120ns | AMD-Advanced-Micro-Devices | FBGA | 48 | -40°C | 85°C | 549 K |
| MSFB12-85-02640 | 85.38 MHz, IF filter for AMPS | distributor | - | 10 | -30°C | 80°C | 151 K |
| PHB125N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 56 K |
| PHB12NQ15T | 150 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| T10B120B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B120T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
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