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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DT28F160F3B120Fast boot block flash memory 16 Mbit. Access speed 120 nsIntel-CorporationSSOP56-40°C85°C277 K
DT28F800F3B120Fast boot block flash memory 8 Mbit. Access speed 120 nsIntel-CorporationSSOP56-40°C85°C277 K
GT28F008B3-B120Smart 3 advanced boot block byte-wide flash memory 8 Mbit. Access speed 120 nsIntel-CorporationmicroBGA48-40°C85°C408 K
GT28F016B3-B120Smart 3 advanced boot block byte-wide flash memory 16 Mbit. Access speed 120 nsIntel-CorporationmicroBGA48-40°C85°C408 K
GT28F160F3B120Fast boot block flash memory 16 Mbit. Access speed 120 nsIntel-CorporationmicroBGA56-40°C85°C277 K
GT28F800F3B120Fast boot block flash memory 8 Mbit. Access speed 120 nsIntel-CorporationmicroBGA56-40°C85°C277 K
PD55HB1201200V Thyristor moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--6-40°C125°C588 K
PM25RSB12025 Amp intelligent power module for flat-base type insulated packageMitsubishi-Electric-Corporation-Semiconductor-Group-25-20°C150°C82 K
PM25RSB12025Amp - intelligent power modulesMitsubishi-Electric-Corporation-Semiconductor-Group----925 K
TE28F008B3-B120Smart 3 advanced boot block byte-wide flash memory 8 Mbit. Access speed 120 nsIntel-CorporationTSOP40-40°C85°C408 K
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