| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1253 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 74 K |
| 2SB1254 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 74 K |
| 2SB1255 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 74 K |
| B125C1000G | Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | WOG | - | - | - | 123 K |
| B125C1500G | Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | WOG | - | - | - | 146 K |
| B125C2300-1500 | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 62 K |
| B125C3200-2200 | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 83 K |
| B125C3700-2200 | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 83 K |
| B125C800DM | Miniature Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | DFM | - | - | - | 84 K |
| B125C800G | Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | WOG | - | - | - | 124 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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