| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1502 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 70 K |
| 2SB1503 | Silicon PNP epitaxial planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 70 K |
| B150 | 1 AMP surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 150°C | 648 K |
| E28F004BL-B150 | 4-Mbit(512K x 8) low-power boot block flash memory. Access speed 150 ns | Intel-Corporation | TSOP | 40 | -20°C | 70°C | 496 K |
| FMB150 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| MA2B150 | Silicon epitaxial planer type switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 50 K |
| PA28F400BL-B150 | 4-Mbit(256K x 16,512K x 8) low-power boot block flash memory. Access speed 150 ns | Intel-Corporation | PSOP | 44 | -20°C | 70°C | 496 K |
| SB150 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 39 K |
| SB150 | Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 45 K |
| VMB150-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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