| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BB204B | 30 V, VHF variable capacitance double diode | Philips-Semiconductors | - | 3 | -55°C | 100°C | 31 K |
| BB204G | 30 V, VHF variable capacitance double diode | Philips-Semiconductors | - | 3 | -55°C | 100°C | 31 K |
| BB204G | 30 V, VHF variable capacitance double diode | Philips-Semiconductors | - | 3 | -55°C | 100°C | 31 K |
| FB2031BB | Vcc=5V+/-10% , 9-bit latched/registered/pass-thru Futurebus+transceiver | Philips-Semiconductors | QFP | 52 | 0°C | 70°C | 134 K |
| FB2033BB | Vcc=5V+/-10% , 8-bit latched/registered/pass-thru Futurebus+transceiver | Philips-Semiconductors | QFP | 52 | 0°C | 70°C | 86 K |
| FB2033BB | Vcc=5V+/-10% , 8-bit latched/registered/pass-thru Futurebus+transceiver | Philips-Semiconductors | QFP | 52 | 0°C | 70°C | 86 K |
| FB2041BB | 5 V 7-bit Futurebus+transceiver | Philips-Semiconductors | QFP | 52 | 0°C | 70°C | 108 K |
| PHB20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 334 K |
| PHB20NQ20T | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 105 K |
| T10B200B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B200T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
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