| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B20A45VIC | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 75 K |
| B20A60VIC | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 75 K |
| BB204G | 30 V, VHF variable capacitance double diode | Philips-Semiconductors | - | 3 | -55°C | 100°C | 31 K |
| BB204G | 30 V, VHF variable capacitance double diode | Philips-Semiconductors | - | 3 | -55°C | 100°C | 31 K |
| FFB20U20S | ULTRA FAST RECOVERY POWER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 111 K |
| FFB20U60S | ULTRA FAST RECOVERY POWER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 111 K |
| FGB20N6S2 | 600V, SMPS II Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 183 K |
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode | Fairchild-Semiconductor | - | - | - | - | 232 K |
| FQB20N06L | 60V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 680 K |
| STB19NB20-1 | N-CHANNEL 200V 0.5 OHM 19A TO-220/TO-220FP/I2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 546 K |
| STB200NF03 | N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 557 K |
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