| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYWB29-100 | Fast Efficient Plastic Rectifier | General-Semiconductor | - | - | - | - | 78 K |
| BYWB29-150 | Fast Efficient Plastic Rectifier | General-Semiconductor | - | - | - | - | 78 K |
| BYWB29-200 | Fast Efficient Plastic Rectifier | General-Semiconductor | - | - | - | - | 78 K |
| BYWB29-50 | Fast Efficient Plastic Rectifier | General-Semiconductor | - | - | - | - | 78 K |
| FFB2907A | PNP Multi-Chip General Purpose Amplifier | Fairchild-Semiconductor | - | 6 | - | - | 62 K |
| FMB2907A | PNP Multi-Chip General Purpose Amplifier | Fairchild-Semiconductor | SOIC | 6 | - | - | 62 K |
| KTB2955 | PNP transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 267 K |
| MTB29N15E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 76 K |
| SB290 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 41 K |
| SB290 | 90 V, 2 A, Schottky barrier rectifier | distributor | DO | 2 | -50°C | 125°C | 180 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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