| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DZB30C | Silicon diffused junction type, 1W Zener diode | SANYO-Electric-Co--Ltd- | 1083 | 2 | - | - | 40 K |
| SB300-05H | Shottky barrier diode, 50V/30A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 80 K |
| SB300-05R | Shottky barrier diode, 50V/30A rectifier | SANYO-Electric-Co--Ltd- | 1180 | 3 | - | - | 83 K |
| SB300-09 | Shottky barrier diode, 90V/30A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 80 K |
| STB3015L | N-CHANNEL 30V - 0.013 OHM - 40A - D2PAK/TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 59 K |
| STB3020L | N-CHANNEL 30V - 0.019 OHM - 40A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| STB30N10 | N-CHANNEL 100V - 0.06 OHM - 30A - D2PAK POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 43 K |
| STB30NE06L | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| STP12NB30FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 56 K |
| STP7NB30FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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