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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BB301CSmall signal high frequency amplifier field effect (FET) transistordistributor----46 K
BB301MSmall signal high frequency amplifier field effect (FET) transistordistributor----46 K
GB301Silicon Controlled RectifierMicrosemi-Corporation----132 K
GB301ASilicon Controlled RectifierMicrosemi-Corporation----132 K
GB301X-DC12-TF-LRelay. Coil voltage 12 VDC. Contact arrandement SPST-NO/DM. Contact material AgCdO. Cover top flang. Option neon lamp.distributor---45°C60°C69 K
GB301X-DC6-TF-LRelay. Coil voltage 6 VDC. Contact arrandement SPST-NO/DM. Contact material AgCdO. Cover top flang. Option neon lamp.distributor---45°C60°C69 K
GB301X-DC6-TF-LRelay. Coil voltage 6 VDC. Contact arrandement SPST-NO/DM. Contact material AgCdO. Cover top flang. Option neon lamp.distributor---45°C60°C69 K
STB3015LN-CHANNEL 30V - 0.013 OHM - 40A - D2PAK/TO-220 STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----59 K
XN0B301Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----60 K
XP0B301Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----56 K
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