| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CB35000 | 0.5 MICRON HCMOS STANDARD CELLS | SGS-Thomson-Microelectronics | - | - | - | - | 166 K |
| IDT72245LB35TF | CMOS syncFIFO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 | Integrated-Device-Technology-Inc- | STQFP | 64 | 0°C | 70°C | 209 K |
| IDT72245LB35TFB | CMOS syncFIFO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 | Integrated-Device-Technology-Inc- | STQFP | 64 | -55°C | 125°C | 209 K |
| ISB35000 | 0.5 MICRON HCMOS ARRAYS | SGS-Thomson-Microelectronics | - | - | - | - | 345 K |
| MX0912B351Y | NPN microwave power transistor | Philips-Semiconductors | SOT439 | - | - | - | 92 K |
| RX1214B350Y | NPN microwave power transistor | Philips-Semiconductors | SOT439 | - | - | - | 91 K |
| RZ1214B35Y | NPN microwave power transistor | Philips-Semiconductors | SOT443 | - | - | - | 69 K |
| SB350 | 3.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 40 K |
| SB350 | Medium Current Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 47 K |
| VNB35N07 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 139 K |
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