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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FB3508800 V, 35 A glass passivated bridge rectifierdistributor-4-55°C150°C35 K
FB3508L800 V, 35 A glass passivated bridge rectifierdistributor-4-55°C150°C35 K
FB35101000 V, 35 A glass passivated bridge rectifierdistributor-4-55°C150°C35 K
FB3510L1000 V, 35 A glass passivated bridge rectifierdistributor-4-55°C150°C35 K
RX1214B350Y65 V, NPN microwave power transistorPhilips-SemiconductorsSOT3--76 K
RZ1214B35Y65 V, NPN microwave power transistorPhilips-SemiconductorsSOT3--59 K
SB3510W1000 V, 35.0 A silicon bridgedistributorSB4-65°C150°C205 K
STB35NF10N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----466 K
VNB35NV04"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETSGS-Thomson-Microelectronics----412 K
XC6204B352MRlow noise, positive voltage LDO regulators, no pull-down resistor built in, output 3.5V +/-2%Torex-Semiconductor-Ltd--5-40°C85°C1 M
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