| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B360/A/B | 60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection | distributor | SMA | 2 | -65°C | 150°C | 58 K |
| FDB3632 | N-Channel UltraFET ® Trench MOSFET 100V, 80A, 9m Ohm | Fairchild-Semiconductor | - | - | - | - | 267 K |
| FDB3652 | N-Channel PowerTrench ® MOSFET 100V, 61A, 16m Ohm | Fairchild-Semiconductor | - | - | - | - | 272 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| QEB363 | SUBMINIATURE PLASTIC INFRARED EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 124 K |
| QSB363 | SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 129 K |
| QSB363C | SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 106 K |
| SB360 | 60V; 3.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | distributor | - | 2 | -65°C | 150°C | 147 K |
| SB360D | 60 V, 3 A, DPAK surface mount schottky barrier rectifier | distributor | TO | 3 | -50°C | 125°C | 166 K |
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