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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2B4541.5V; 35mW; 840mm VCSEL laser diode; for datacomdistributor-3-40°C85°C189 K
2B4541.5V; 35mW; 840mm VCSEL laser diode; for datacomdistributor-3-40°C85°C189 K
2B4541.5V; 35mW; 840mm VCSEL laser diode; for datacomdistributor-3-40°C85°C189 K
2B4541.5V; 35mW; 840mm VCSEL laser diode; for datacomdistributor-3-40°C85°C189 K
2B4551.5V; 35mW; 840mm VCSEL laser diode; for datacomdistributor-3-55°C125°C47 K
PHB45N03LTA25 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT3-55°C175°C298 K
PHB45NQ10T100 V, N-channel trenchMOS transistorPhilips-SemiconductorsSOT3-55°C175°C110 K
QL3040-0PB456C40,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorPBGA4560°C70°C477 K
QL3040-1PB456C40,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorPBGA4560°C70°C477 K
QL3040-2PB456C40,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorPBGA4560°C70°C477 K
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