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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ISPLSI81080V-125LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-90LB49290 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI81080V-90LB49290 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-125LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-60LB49260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
ISPLSI8600V-90LB492125 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA492-55°C125°C333 K
RB491DSchottky barrier diodeROHMSMD33--57 K
RB495DSchottky barrier diodeROHMSMD33--53 K
VNB49N04OMNIFET FULLY AUTOPROTECTED POWER MOSFETSGS-Thomson-Microelectronics----133 K
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