| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB4N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 704 K |
| FQB4N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 517 K |
| LNG4B4NPY | Round Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 29 K |
| MTB4N80E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
| PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| PHB4ND40E | 400 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
| STB4NB50 | N-CHANNEL 500V - 2.5 OHM - 3.8A - D2PAK/I2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| STB4NB80 | N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 52 K |
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