| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB4N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 78 K |
| PHB4N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 80 K |
| PHB4N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 80 K |
| PHB4ND40E | PowerMOS transistor. FREDFET, avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 79 K |
| STB4NC60A-1 | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -60°C | 150°C | 338 K |
| STB4NC80Z-1 | N-channel power MOSFET, 800V, 4A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 543 K |
| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 526 K |
| STB4NC80ZT4 | N-channel power MOSFET, 800V, 4A | SGS-Thomson-Microelectronics | D2PAK | 3 | -65°C | 150°C | 543 K |
| STB4NK60Z | N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 759 K |
| STB4NK60Z-1 | N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 759 K |
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