| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB50N06EL | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 97 K |
| MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 289 K |
| MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 289 K |
| MTB50N06VL | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 249 K |
| MTB50P03HDL | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 182 K |
| USB50805C | Transient Voltage Suppressor | Microsemi-Corporation | S08 | - | - | - | 91 K |
| USB50815C | Transient Voltage Suppressor | Microsemi-Corporation | S08 | - | - | - | 91 K |
| USB50824C | Transient Voltage Suppressor | Microsemi-Corporation | S08 | - | - | - | 91 K |
| VHB50-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| VHB50-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
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