| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BB503M | Small signal high frequency amplifier field effect (FET) transistor | distributor | - | - | - | - | 64 K |
| HD63B50P | CMOS ACIA (asyncronous communication interface adapter) with 2.0 MHz clock frequency | distributor | - | 24 | -20°C | 75°C | 542 K |
| STB50NE08 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 95 K |
| STB50NE10 | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STB50NE10L | N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 51 K |
| STE38NB50F | N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 89 K |
| STP4NB50FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| STP6NB50FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STP9NB50FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| STY34NB50F | N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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