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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB5117400BJ-50 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 138 K |
| HYB5117400BJ-500 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
| HYB5117400BJ-60 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 138 K |
| HYB5117400BJ-600 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
| HYB5117400BJ-700 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
| HYB5117405BJ-50 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB5117405BJ-60 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB5117800BSJ-50 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-60 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-70 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
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