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Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|---|---|---|---|---|---|---|
HYB5116165BJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
HYB5116165BJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
HYB5117805BJ-50 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 258 K |
HYB5117805BJ-60 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 258 K |
HYB5117805BJ-70 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 258 K |
HYB5117805BSJ-50 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 176 K |
HYB5117805BSJ-60 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 176 K |
HYB5118160BSJ-50 | 1M x 16bit DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 254 K |
HYB5118160BSJ-60 | 1M x 16bit DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 254 K |
HYB5118160BSJ-70 | 1M x 16bit DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 254 K |
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