| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B6002AD | 550 V, 50 mA, high surge current sidactor device | distributor | - | 3 | -40°C | 150°C | 1 M |
| NDB6030L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 56 K |
| NDB6051 | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V | Fairchild-Semiconductor | - | - | - | - | 54 K |
| NDB6060L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V | Fairchild-Semiconductor | - | - | - | - | 361 K |
| PB605 | 6.0A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 81 K |
| SB605 | 600 V, 6.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 90 K |
| SB606 | 800 V, 6.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 90 K |
| SB607 | 1000 V, 6.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 90 K |
| VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 33 K |
| VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 32 K |
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