| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSM400GB60DN2 | 600V/475A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 127 K |
| FDB6030BL | N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 401 K |
| FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 473 K |
| FDB6035AL | N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 414 K |
| FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 413 K |
| SB60-05H | Schottky barrier diode, 50V/6A rectifier | SANYO-Electric-Co--Ltd- | 1159B | 3 | - | - | 79 K |
| SB60-05K | Schottky barrier diode, 50V/6A rectifier | SANYO-Electric-Co--Ltd- | 1199B | 3 | - | - | 73 K |
| STGB3NB60SD | N-CHANNEL 3A - 600V TO263 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| STGD3NB60S | N-CHANNEL 3A - 600V DPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| STGD3NB60SD | N-CHANNEL 3A - 600V DPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 89 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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