Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BB809 | VHF variable capacitance diode | Philips-Semiconductors | - | 2 | -55°C | 100°C | 41 K |
BB809 | VHF variable capacitance diode | Philips-Semiconductors | - | 2 | -55°C | 100°C | 41 K |
FB80-C1000G | 200 V, 1 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
FB80-C1500G | 200 V, 1.5 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 44 K |
MB805 | 8.0A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
MURHB805CT | 8.0A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 103 K |
RX1214B80W | 65 V, NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 73 K |
RX1214B80W | 65 V, NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 73 K |
STB80NE03L-06-1 | N-CHANNEL 30V - 0.005 OHM - 80A D2PAK/I2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 295 K |
STB80NF10T4 | N-CHANNEL 100V - 0.012 OHM - 80A I2PAK/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 261 K |
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