| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSB834 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 70 K |
| KSB834W | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
| MBRB830 | 8.0A, 30V ultra fast recovery rectifier | distributor | - | - | - | - | 105 K |
| PHB83N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 308 K |
| SB830 | Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 23 K |
| SB830 | 30 V, 8 A,schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 146 K |
| SB830 | 30 V, 8 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 146 K |
| SB830D | 30 V, 8 A, D2PAK surface mount schottky barrier rectifier | distributor | D2PAK | 4 | -50°C | 150°C | 146 K |
| SB830D | 30 V, 8 A, D2PAK surface mount schottky barrier rectifier | distributor | TO | 3 | -50°C | 150°C | 146 K |
| SB830F | 30 V, 8 A,isolation schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 147 K |
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