Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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SB840 | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 2 | -50°C | 125°C | 37 K |
SB840 | Reverse voltage: 40.00V; 8.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 37 K |
SB840 | Reverse voltage: 40.00V; 8.0A schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 37 K |
SB840CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 3 | -50°C | 125°C | 45 K |
SB840D | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 4 | -50°C | 150°C | 56 K |
SB840DC | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Ta = 100degC 8 A. | distributor | - | 4 | -50°C | 150°C | 46 K |
SB840FCT | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 3 | -50°C | 125°C | 42 K |
VTB8440 | Process photodiode. Isc = 45 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 26 K |
VTB8440B | Process photodiode. Isc = 5 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 27 K |
VTB8441B | Process photodiode. Isc = 5 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 27 K |
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