| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC107 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC108 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC109 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC140 | 650mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 144 K |
| BC141 | 650mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 144 K |
| BC142 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 200°C | 72 K |
| BC167 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 228 K |
| BC168 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 228 K |
| BC169 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 228 K |
| IRG4BC15UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
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