| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MBC10-060 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 166 K |
| 1MBC10D-060 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 266 K |
| BC107 | 45V Vce, 0.1A Ic, 150MHz NPN bipolar transistor | Semelab-Plc- | TO18 | - | - | - | 14 K |
| BC107 | LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS | SGS-Thomson-Microelectronics | - | - | - | - | 69 K |
| BC109 | 20V Vce, 0.1A Ic, 150MHz NPN bipolar transistor | Semelab-Plc- | TO18 | - | - | - | 14 K |
| DBC10 | Diffused junction silicon diode, 1A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1241 | 4 | - | - | 37 K |
| IRG4BC10K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 158 K |
| IRG4BC10KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
| IRG4BC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 217 K |
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