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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1MBC10-060Fuji discrete package IGBTdistributor-3--166 K
1MBC10D-060Fuji discrete package IGBTdistributor-3--266 K
BC10745V Vce, 0.1A Ic, 150MHz NPN bipolar transistorSemelab-Plc-TO18---14 K
BC107LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSSGS-Thomson-Microelectronics----69 K
BC10920V Vce, 0.1A Ic, 150MHz NPN bipolar transistorSemelab-Plc-TO18---14 K
DBC10Diffused junction silicon diode, 1A single-phase bridge rectifierSANYO-Electric-Co--Ltd-12414--37 K
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C158 K
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C210 K
IRG4BC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C157 K
IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-RectifierDDPak3-55°C150°C217 K
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