| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFBC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
| IRFBC20L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 355 K |
| IRFIBC20G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 1.7 A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRG4BC20 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
| IRGBC20K-S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 258 K |
| IRGBC20M-S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 247 K |
| IRGBC20MD2-S | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 420 K |
| IRGBC20SD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 497 K |
| IRGBC20UD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 427 K |
| [1] 2 [3] [4] [5] [6] [7] [8] |
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