| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC200 | 50mW miniature PNP AF low noise silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 125°C | 120 K |
| GC79BNBC20RD | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
| IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 287 K |
| IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 287 K |
| IRG4BC20U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRG4BC20UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 236 K |
| IRG4BC20W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 130 K |
| IRG4BC20W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 152 K |
| TBC20-11EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | distributor | - | 20 | -40°C | 85°C | 236 K |
| TBC20-12EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | distributor | - | 18 | -40°C | 85°C | 236 K |
| TBC20-22EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | distributor | - | 28 | -40°C | 85°C | 236 K |
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