| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD241B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| BD242 | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| BD242A | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| BD242B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| MMBD2835 | 35 V, 100mA monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD2835 | 35 V, 100mA monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD2836 | 75 V, monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD2836 | 75 V, monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD2837 | 75 V, monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD2837 | 75 V, monolithic dual switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
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