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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BD900AGeneral purpose PNP Darlington transistorPower-Innovations----150 K
BD902General purpose PNP Darlington transistorPower-Innovations----151 K
MBM29DL321BD90PBTCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic FBGA57-40°C85°C1 M
MBM29DL321BD90PFTNCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL321BD90PFTRCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL322BD90PBTCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic FBGA57-40°C85°C1 M
MBM29DL322BD90PFTNCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL322BD90PFTRCMOS 32M (4M x 8/2M x16) bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MMBD914LT1High-speed switching diodeMotorola-3-55°C150°C78 K
SMBD914Silicon switching diodeInfineon-formely-Siemens-3--97 K
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