| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| Am29BDS323DT11AWKI | 32 Megabit (2 M x 16-Bit) CMOS 1.8 volt-only simultaneous read/write, burst mode flash memory | AMD-Advanced-Micro-Devices | FBGA | 47 | -40°C | 85°C | 746 K |
| BDS18SMD | 120V Vce, 15A Ic, 30MHz PNP bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 69 K |
| BDS19 | 150V Vce, 15A Ic, 30MHz PNP bipolar transistor | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 69 K |
| BDS19SMD | 150V Vce, 15A Ic, 30MHz PNP bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 69 K |
| BDS20 | 80V Vce, 5A Ic, 8MHz NPN bipolar transistor | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 20 K |
| BDS20SMD | 80V Vce, 5A Ic, 8MHz NPN bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 20 K |
| BDS21 | 80V Vce, 5A Ic, 8MHz PNP bipolar transistor | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 20 K |
| G17BDS-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgMeO2. Contact arrangement: 1 form B. Dust cover. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17BDS-DC24 | Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO2. Contact arrangement: 1 form B. Dust cover. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17BDS-DC6 | Relay. Nominal voltage 6VDC. Resistance(+-10%) 28W. Contact material AgMeO2. Contact arrangement: 1 form B. Dust cover. | distributor | - | 4 | -40°C | 85°C | 63 K |
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