| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1005 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
| BF1005S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 52 K |
| BF1009 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 33 K |
| BF1009S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
| BF1102R | Dual N-channel dual gate MOS-FETs | Philips-Semiconductors | SOT363 | - | - | - | 120 K |
| BF1107 | N-channel single gate MOS-FETs | Philips-Semiconductors | SOT23 | - | - | - | 54 K |
| BF1107W | N-channel single gate MOS-FETs | Philips-Semiconductors | SOT323 | - | - | - | 54 K |
| BF1108 | Silicon RF switches | Philips-Semiconductors | SOT143 | - | - | - | 61 K |
| BF1108R | Silicon RF switches | Philips-Semiconductors | SOT143 | - | - | - | 61 K |
| DBF10 | Diffused junction silicon diode, 1A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1210 | 4 | - | - | 38 K |
| [1] [2] 3 [4] [5] [6] |
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