| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1012 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 33 K |
| BF1012S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 43 K |
| BF1012W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 359 K |
| BF1102 | 7 V, dual N-channel dual gate MOS-FET | Philips-Semiconductors | SOT | 6 | - | - | 154 K |
| BF173 | 40V NPN silicon planar epitaxial transistor | distributor | - | 4 | -65°C | 175°C | 64 K |
| BF199 | 40V NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
| BF199 | NPN silicon RF transistor | Motorola | - | 3 | -55°C | 150°C | 144 K |
| MMBF170 | 60V; N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 62 K |
| MMBF170 | N - Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 75 K |
| MMBF170LT1 | TMOS FET transistor | Motorola | - | 3 | -55°C | 150°C | 98 K |
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