Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BF1201 | N-channel dual-gate PoLo MOS-FET. | Philips-Semiconductors | SOT143B | 4 | 0°C | 150°C | 103 K |
BF1201R | N-channel dual-gate PoLo MOS-FET. | Philips-Semiconductors | SOT143R | 4 | 0°C | 150°C | 103 K |
BF1201WR | N-channel dual-gate PoLo MOS-FET. | Philips-Semiconductors | SOT343R | 4 | 0°C | 150°C | 103 K |
BF1202 | N-channel dual-gate PoLo MOS-FET. | Philips-Semiconductors | SOT143B | 4 | 0°C | 150°C | 103 K |
BF199 | NPN medium frequency transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 57 K |
BF199 | NPN medium frequency transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 57 K |
DBF150 | Silicon Diffused Junction Type 15A Single-Phase Bridge Rectifier | SANYO-Electric-Co--Ltd- | - | - | - | - | 21 K |
PMBF107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 60 K |
PMBF107 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 70 K |
PMBF170 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 56 K |
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