| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BBF2812S | 12V, 20W DC-DC converter | distributor | - | 12 | -40°C | 85°C | 169 K |
| BBF2812SK | 12V, 20W DC-DC converter | distributor | - | 12 | -55°C | 125°C | 169 K |
| BBF2815S | 15V, 20W DC-DC converter | distributor | - | 12 | -40°C | 85°C | 169 K |
| BBF2815SH | 15V, 20W DC-DC converter | distributor | - | 12 | -55°C | 125°C | 169 K |
| BBF2815SK | 15V, 20W DC-DC converter | distributor | - | 12 | -55°C | 125°C | 169 K |
| BF224 | 45V NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 109 K |
| IRFBF20 | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
| IRFBF20L | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | - | 3 | -55°C | 150°C | 311 K |
| IRFBF20S | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 311 K |
| IRFIBF20G | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.2A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
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