| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF245B | Transistor polarity N Channel Gfs min 3 mA/V Gfs max 6.5 mA/V Current Idss max 15 mA Current Idss min 6 mA Current Ig 10 mA Application code HFA Power Ptot 350 mW | Fairchild-Semiconductor | - | - | - | - | 22 K |
| BF245C | Transistor polarity N Channel Gfs min 3 mA/V Gfs max 6.5 mA/V Current Idss max 25 mA Current Idss min 12 mA Current Ig 10 mA Application code HFA Power Ptot 350 mW | Fairchild-Semiconductor | - | - | - | - | 22 K |
| BF246A | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| BF246A | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| BF246B | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| BF246C | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| BF247B | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| BF247C | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
| DBF250 | Silicon Diffused Junction Type 25A Single-Phase Bridge Rectifier | SANYO-Electric-Co--Ltd- | - | - | - | - | 21 K |
| DBF250 | Silicon Diffused Junction Type 25A Single-Phase Bridge Rectifier | SANYO-Electric-Co--Ltd- | - | - | - | - | 21 K |
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