| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF620 | NPN silicon planar high voltage transistor | Zetex-Semiconductor | SOT | 3 | -65°C | 150°C | 34 K |
| BF620 | NPN silicon planar high voltage transistor | Zetex-Semiconductor | SOT | 3 | -65°C | 150°C | 34 K |
| BF621 | PNP silicon planar high voltage transistor | Zetex-Semiconductor | SOT | 3 | -65°C | 150°C | 34 K |
| BF621 | PNP silicon planar high voltage transistor | Zetex-Semiconductor | SOT | 3 | -65°C | 150°C | 34 K |
| BF660 | PNP silicon RF transistor | Infineon-formely-Siemens | - | 3 | - | - | 39 K |
| BF660W | PNP silicon RF transistor | Infineon-formely-Siemens | - | 3 | - | - | 59 K |
| CEBF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 506 K |
| CEBF640 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 507 K |
| MCM72BF64SG60 | 256KB and 512KB burstRAM secondary cache module for pentium | Motorola | GP | 80 | 0°C | 70°C | 253 K |
| MCM72BF64SG66 | 256KB and 512KB burstRAM secondary cache module for pentium | Motorola | GP | 80 | 0°C | 70°C | 253 K |
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