| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB514400BJ-60 | 1M x 4-bit dynamic RAM, 60ns | Infineon-formely-Siemens | SOJ | 20 | 0°C | 70°C | 931 K |
| KM416C1000BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 84 K |
| KM416C1004BJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
| KM416C1200BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 84 K |
| KM416C1204BJ-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
| KM416V1000BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 84 K |
| KM416V1004BJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
| KM416V1200BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 84 K |
| KM416V1204BJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
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