| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS107 | 200V; 120mA N-channel enchancement mode transistor. Specially suited for telephone subsets | distributor | - | 3 | -55°C | 150°C | 61 K |
| BS170 | 60V; 300mA N-channel enchancement mode transistor | distributor | - | 3 | -55°C | 150°C | 66 K |
| BS170L | 60 V, N-Channel enhancement mode MOS transistor | Calogic-LLC | - | 3 | -55°C | 150°C | 25 K |
| EBS12UC6APS-75L | 128M; 133MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 145 K |
| EBS12UC6APS-7AL | 128M; 133MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 145 K |
| EBS12UC6APS-80L | 128M; 100MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 145 K |
| HDBS101G | 1.0A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| HDBS102G | 1.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| HDBS103G | 1.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| HDBS104G | 1.0A, 400V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
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