Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSP106 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 77 K |
BSP107 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 77 K |
BSP110 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 76 K |
BSP120 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 76 K |
BSP122 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
BSP126 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 75 K |
BSP127 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
VND05BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 226 K |
VND10BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
VND10BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
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