| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
| BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
| BSS138-7 | 50V; 200mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 125°C | 92 K |
| BSS38 | 300mW NPN silicon planar transistor | distributor | - | 3 | -55°C | 150°C | 44 K |
| BSS64LT1 | 80 V, driver transistor | distributor | - | 3 | -55°C | 150°C | 21 K |
| BSS84 | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 49 K |
| BSS84 | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 49 K |
| BSS84-7 | 50V; 130mA P-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 48 K |
| G17BSS-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgMeO2. Contact arrangement: 1 form B. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17BSS-DC24 | Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO2. Contact arrangement: 1 form B. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17BSS-DC6 | Relay. Nominal voltage 6VDC. Resistance(+-10%) 28W. Contact material AgMeO2. Contact arrangement: 1 form B. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
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