Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSS123 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
BSS123 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
BSS123A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
BSS123A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
BSS123LT1 | TMOS FET transistor | Motorola | - | 3 | -55°C | 150°C | 93 K |
BSS138 | 50V N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 481 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
BSS169 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 33 K |
BSS171 | High voltage transistor | Motorola | - | 3 | -65°C | 200°C | 112 K |
BSS192 | P-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 4 | -55°C | 150°C | 75 K |
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