Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BSS110 | 50 V, P-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 76 K |
BSS123 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 57 K |
BSS123-7 | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
BSS123W | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
BSS138 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 58 K |
BSS138-7 | 50V; 200mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 125°C | 92 K |
BSS138DW | 50V; 200mA dual N-channel enchancement mode field effect transistor | distributor | - | 6 | -55°C | 150°C | 58 K |
BSS138W | 50V; 200mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 90 K |
BSS192 | 240 V, P-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 64 K |
BSS192 | P-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT89 | 3 | 0°C | 150°C | 76 K |
[1] [2] [3] 4 |
---|