| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB3118160BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118160BST-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118160BST-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| MH32V25BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 135 K |
| MH32V7245BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
| MH32V7245BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
| MH32V725BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| MH32V725BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| SC4040BSTR | Precision shunt voltage reference | Semtech-Corporation | - | 8 | -40°C | 150°C | 99 K |
| SC4041BSTR | Precision shunt voltage reference | Semtech-Corporation | - | 8 | -40°C | 150°C | 139 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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